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Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor
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10.1063/1.2093940
/content/aip/journal/apl/87/15/10.1063/1.2093940
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2093940

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction patterns of pentacene films grown on insulators; (b) AFM micrographs of pentacene on insulators prepared with various (PVP/PMF) ratios: 20:1, 5:1, 1.7:1, 1:1.

Image of FIG. 2.
FIG. 2.

The drain current vs drain voltage characteristics of a pentacene TFT prepared with a PVP:PMF ratio of 1:1.

Image of FIG. 3.
FIG. 3.

vs and vs characteristics of pentacene TFTs prepared with various (PVP:PMF) ratios: (a) 20:1, (b) 5:1, (c) 1.7:1, (d) 1:1

Tables

Generic image for table
Table I.

Properties of pentacene devices with PVP insulators prepared with various PVP/PMF ratios.

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/content/aip/journal/apl/87/15/10.1063/1.2093940
2005-10-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2093940
10.1063/1.2093940
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