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Vacancy formation in GaAs under different equilibrium conditions
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10.1063/1.2084330
/content/aip/journal/apl/87/16/10.1063/1.2084330
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2084330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Average positron lifetime versus measurement temperature for (a) GaAs:Si and (b) undoped SI GaAs annealed at different arsenic pressures. As grown SI material is denoted as reference. Lines are to guide the eye only.

Image of FIG. 2.
FIG. 2.

Vacancy defect concentrations in annealed GaAs:Si and SI GaAs extracted from the positron lifetime data presented in Fig. 1. Solid lines represent a fit according to with equal and for GaAs:Si and SI GaAs, respectively.

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/content/aip/journal/apl/87/16/10.1063/1.2084330
2005-10-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacancy formation in GaAs under different equilibrium conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2084330
10.1063/1.2084330
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