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Cross-sectional SEM micrograph showing a trapezoidal shape of oxide front after of PEC oxidation. The total oxide thickness is .
Cross-sectional SEM micrograph showing a pentagon shape of oxide front after a repeated oxidation and etching process.
Top view of SEM micrograph showing GaN hexagonal cavities after dissolving the PEC-grown oxide in (a) and (b) molten KOH. Inset: magnified cross-sectional SEM micrograph revealing an optically smooth sidewall in (a). (c) Cross-sectional SEM micrograph of a typical hexagonal GaN cavity to be used in the microphotoluminescence study. The hexagon side length is .
Cavity size dependent emission spectra of GaN hexagons with radius , 3, and measured at an intensity of YAG laser. The spectra have been vertically shifted for comparison. Inset: optical path (dashed line) showing repeated total internal reflections in the GaN hexagonal cavity.
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