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Gallium nitride microcavities formed by photoenhanced wet oxidation
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10.1063/1.2103423
/content/aip/journal/apl/87/16/10.1063/1.2103423
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2103423
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM micrograph showing a trapezoidal shape of oxide front after of PEC oxidation. The total oxide thickness is .

Image of FIG. 2.
FIG. 2.

Cross-sectional SEM micrograph showing a pentagon shape of oxide front after a repeated oxidation and etching process.

Image of FIG. 3.
FIG. 3.

Top view of SEM micrograph showing GaN hexagonal cavities after dissolving the PEC-grown oxide in (a) and (b) molten KOH. Inset: magnified cross-sectional SEM micrograph revealing an optically smooth sidewall in (a). (c) Cross-sectional SEM micrograph of a typical hexagonal GaN cavity to be used in the microphotoluminescence study. The hexagon side length is .

Image of FIG. 4.
FIG. 4.

Cavity size dependent emission spectra of GaN hexagons with radius , 3, and measured at an intensity of YAG laser. The spectra have been vertically shifted for comparison. Inset: optical path (dashed line) showing repeated total internal reflections in the GaN hexagonal cavity.

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/content/aip/journal/apl/87/16/10.1063/1.2103423
2005-10-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gallium nitride microcavities formed by photoenhanced wet oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2103423
10.1063/1.2103423
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