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Ohmic contacts to silicon carbide determined by changes in the surface
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10.1063/1.2106005
/content/aip/journal/apl/87/16/10.1063/1.2106005
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2106005
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of contact as a function of annealing temperatures and unannealed Ni contacts patterned in place of the removed PtSi contacts, and (b) XRD spectra from after annealing at 900 and 1000 °C, for 5 min each.

Image of FIG. 2.
FIG. 2.

Schematic illustration of the processing steps performed to determine the effect of the SiC surface on the ohmic behavior. The gray areas represent the regions in the surface directly underneath the original Pt or PtSi contacts that were affected by the contact anneal.

Image of FIG. 3.
FIG. 3.

Representative SEM images of annealed TLM patterns (a) before and (b) after etching to remove the contact, and (c) XEDS spectra from one of the contact regions shown in (b). Figures (d), (e), and (f) show the corresponding data for the annealed contacts. The letters “MP” indicate the locations of the metal pads before etching.

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/content/aip/journal/apl/87/16/10.1063/1.2106005
2005-10-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contacts to silicon carbide determined by changes in the surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/16/10.1063/1.2106005
10.1063/1.2106005
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