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AFM images of (a) as-received and (b) thermally treated at for . The inset indicates the depth of the scratches on the surface.
RHEED images of (a) thermally treated , (b) at in growth chamber, and (c) GaN epitaxial layer at .
X-ray diffraction of (a) GaN on and (b) thermally treated . Additional peak of is observed for GaN on .
AFM image of etch pits on -cut after high-temperature furnace annealing. Those etch pits indicate the repolarization of after high-temperature furnace annealing.
Direct current characterization of FETs on .
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