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III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy
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10.1063/1.2084340
/content/aip/journal/apl/87/17/10.1063/1.2084340
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2084340
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of (a) as-received and (b) thermally treated at for . The inset indicates the depth of the scratches on the surface.

Image of FIG. 2.
FIG. 2.

RHEED images of (a) thermally treated , (b) at in growth chamber, and (c) GaN epitaxial layer at .

Image of FIG. 3.
FIG. 3.

X-ray diffraction of (a) GaN on and (b) thermally treated . Additional peak of is observed for GaN on .

Image of FIG. 4.
FIG. 4.

AFM image of etch pits on -cut after high-temperature furnace annealing. Those etch pits indicate the repolarization of after high-temperature furnace annealing.

Image of FIG. 5.
FIG. 5.

Direct current characterization of FETs on .

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/content/aip/journal/apl/87/17/10.1063/1.2084340
2005-10-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2084340
10.1063/1.2084340
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