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Charged exciton emission at from single InAs quantum dots grown by metalorganic chemical vapor deposition
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10.1063/1.2093927
/content/aip/journal/apl/87/17/10.1063/1.2093927
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2093927
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Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra from an unetched sample region at (upper), and from a mesa at (lower). The emission above is from the - and -shell states of the InAs QDs; emission below originates from the InGaAs WL-QW. (b) PL spectra from different mesas, shifted in energy to align the predominant low-power emission line. The wavelength of this line (corresponding to ) is given for each spectrum.

Image of FIG. 2.
FIG. 2.

(a) Normalized PL spectra from a single QD at different excitation powers. Peaks and are attributed to neutral and charged exciton (biexciton) emission. (b) Integrated intensities of the peaks in (a), as a function of laser power. Dotted (dashed) lines are fits to the data using a rate-equation model to calculate the exciton (biexciton) intensity (Ref. 17).

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/content/aip/journal/apl/87/17/10.1063/1.2093927
2005-10-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charged exciton emission at 1.3μm from single InAs quantum dots grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2093927
10.1063/1.2093927
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