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Atomically flat aluminum-oxide barrier layers constituting magnetic tunnel junctions observed by in situ scanning tunneling microscopy
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10.1063/1.2108121
/content/aip/journal/apl/87/17/10.1063/1.2108121
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2108121
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sample schematic. Al–O barrier layer was formed by natural oxidation of epitaxially grown Al(001) layer. (b) STM image of surface of Au(001) layer taken with a bias voltage of and a current of . Inset shows zoom in showing atomic resolution at a bias voltage of and a current of . The STM images of Fe(001) bottom electrode: (c) and (d) zoom in with a bias voltage of and a current of . Line-scan profile corresponds to the dotted line.

Image of FIG. 2.
FIG. 2.

STM images of surfaces of (a) Al(001) layer and (c) Al–O layer with a bias voltage of and a current of . Line-scan profiles correspond to dotted lines. Inset shows the RHEED pattern for each surface. Incident beam was injected in direction parallel to Al[100]. Magnified STM images of (b) Al layer with a bias voltage of and a current of and (d) Al–O layer with a bias voltage of and a current of . The arrows show step edges.

Image of FIG. 3.
FIG. 3.

STM images of Fe(001) top electrode: (a) with a bias voltage of and a current of and (b) zoom in with a bias voltage of and a current of . (c) Line-scan profile of Fe(001) top electrode.

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/content/aip/journal/apl/87/17/10.1063/1.2108121
2005-10-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomically flat aluminum-oxide barrier layers constituting magnetic tunnel junctions observed by in situ scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2108121
10.1063/1.2108121
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