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Exciton hopping and nonradiative decay in AlGaN epilayers
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10.1063/1.2112169
/content/aip/journal/apl/87/17/10.1063/1.2112169
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112169
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL (a) and LITG (b) decay transients for epilayers grown on MOCVD (sample S1) and MEMOCVD™ (S2) buffer layers. Lines indicate two-exponential fits according to Eq. (2) in (a) and one-exponential fits in (b).

Image of FIG. 2.
FIG. 2.

PL spectra of epilayer S1 grown on MOCVD buffer as a function of temperature. Dashed line indicates the peaks of the PL spectra and serves as a guide for the eye.

Image of FIG. 3.
FIG. 3.

Temperature dependences of the PL linewidth in epilayers grown on MOCVD (S1, solid points) and MEMOCVD (S2, open points) buffers. Lines show results of Monte Carlo simulation of exciton hopping for different scales of random potential fluctuations and (indicated). The inset depicts the sketch of the double-scaled potential profile in AlGaN alloy, where indicates dispersion of the localized states within isolated Al-poor regions and indicates dispersion of the average exciton energy in these regions.

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/content/aip/journal/apl/87/17/10.1063/1.2112169
2005-10-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Exciton hopping and nonradiative decay in AlGaN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112169
10.1063/1.2112169
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