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Dielectric mismatch effects on the electronic and optical properties of quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

(Left) dependence of ground state energy on the QW width of (a) electrons, (b) light holes, and (c) heavy holes. Solid, dashed, and dashed double-dotted lines represent, respectively, the following interface widths: 0 nm (abrupt), 0.5 nm, and 1.0 nm. (Right) carrier wave functions (in arbitrary units) for (d) 5 nm and (e) 20 nm wide QWs, with electrons, light holes, and heavy holes represented by solid, dashed, and dash-dotted lines, respectively.

Image of FIG. 2.
FIG. 2.

Stark shift of the ground state recombination energy for QWs widths of (a) 5 nm and (b) 20 nm. The e-hh and e-lh transitions are represented by solid and dashed lines in the abrupt case, respectively. In nonabrupt QWs , these transitions are represented by dotted and dash-dotted lines, respectively. [For the sake of comparison, e-hh and e-lh transitions without image charge effects are also depicted: e-hh transitions, and (▵); e-lh transitions, (◻) and (●).]

Image of FIG. 3.
FIG. 3.

Electron-hole wave functions overlap vs QW width (e-lh: top row, e-hh: bottom row) for nonbiased (left column) and biased QWs (right column). The interfaces considered are: abrupt (solid), 0.5 nm (dashed), and 1.0 nm (dash-dotted). For comparison, the results without image charge effects for unbiased QWs are also included: , (◻) and (●).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric mismatch effects on the electronic and optical properties of GaN∕HfO2 quantum wells