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(Left) dependence of ground state energy on the QW width of (a) electrons, (b) light holes, and (c) heavy holes. Solid, dashed, and dashed double-dotted lines represent, respectively, the following interface widths: 0 nm (abrupt), 0.5 nm, and 1.0 nm. (Right) carrier wave functions (in arbitrary units) for (d) 5 nm and (e) 20 nm wide QWs, with electrons, light holes, and heavy holes represented by solid, dashed, and dash-dotted lines, respectively.
Stark shift of the ground state recombination energy for QWs widths of (a) 5 nm and (b) 20 nm. The e-hh and e-lh transitions are represented by solid and dashed lines in the abrupt case, respectively. In nonabrupt QWs , these transitions are represented by dotted and dash-dotted lines, respectively. [For the sake of comparison, e-hh and e-lh transitions without image charge effects are also depicted: e-hh transitions, and (▵); e-lh transitions, (◻) and (●).]
Electron-hole wave functions overlap vs QW width (e-lh: top row, e-hh: bottom row) for nonbiased (left column) and biased QWs (right column). The interfaces considered are: abrupt (solid), 0.5 nm (dashed), and 1.0 nm (dash-dotted). For comparison, the results without image charge effects for unbiased QWs are also included: , (◻) and (●).
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