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Strong anisotropic spin dynamics in narrow (110) quantum wells
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10.1063/1.2112193
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    Affiliations:
    1 ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
    2 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
    3 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan and CREST, Japan Science and Technology Agency, Japan
    4 ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
    Appl. Phys. Lett. 87, 171905 (2005); http://dx.doi.org/10.1063/1.2112193
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/content/aip/journal/apl/87/17/10.1063/1.2112193
2005-10-17
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong anisotropic spin dynamics in narrow n-InGaAs∕AlGaAs (110) quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112193
10.1063/1.2112193
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