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Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly
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10.1063/1.2112198
/content/aip/journal/apl/87/17/10.1063/1.2112198
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112198
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Figures

Image of FIG. 1.
FIG. 1.

Schematic for templated Ge island growth. (a) Electron-beam induced deposition of carbon dot template; (b) annealing in ultra-high vacuum to form SiC nucleation sites; (c) deposition of Ge at temperature ; (d) AFM image of Ge islands that form after annealing at temperature .

Image of FIG. 2.
FIG. 2.

AFM image showing co-existence of self-assembled and templated Ge islands.

Image of FIG. 3.
FIG. 3.

Templated Ge islands grown at . (a) AFM image of templated region; (b) autocorrelation of AFM image, showing expected periodicity; (c) scatter plot of island volume versus average nearest neighbotr volume. The estimated margin of error in determining island volumes is indicated by the shaded region, and the dashed line is a guide for the eye.

Image of FIG. 4.
FIG. 4.

(a) AFM image of array of SiC dots; (b) AFM image of array of Ge islands on SiC template; (c) average topographic profile of 400 Ge islands. Contours are separated by 1Å.

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/content/aip/journal/apl/87/17/10.1063/1.2112198
2005-10-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112198
10.1063/1.2112198
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