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Schematic for templated Ge island growth. (a) Electron-beam induced deposition of carbon dot template; (b) annealing in ultra-high vacuum to form SiC nucleation sites; (c) deposition of Ge at temperature ; (d) AFM image of Ge islands that form after annealing at temperature .
AFM image showing co-existence of self-assembled and templated Ge islands.
Templated Ge islands grown at . (a) AFM image of templated region; (b) autocorrelation of AFM image, showing expected periodicity; (c) scatter plot of island volume versus average nearest neighbotr volume. The estimated margin of error in determining island volumes is indicated by the shaded region, and the dashed line is a guide for the eye.
(a) AFM image of array of SiC dots; (b) AFM image of array of Ge islands on SiC template; (c) average topographic profile of 400 Ge islands. Contours are separated by 1Å.
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