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(Color online) Effect of atmospheric exposure on core-level emission. excited emission for GaSe (left) and AlSe (right) terminated Si(111) before (solid line) and after (dashed line) exposure to atmosphere and a subsequent anneal (dotted line). (a) (left) and (right); (b) ; (c) ; (d) . Short-dashed lines in (a) are least-square fitted components for post-anneal . Dark dashed line in (d) is emission after atmospheric exposure of a GaSe-terminated surface grown with excess Se.
(Color online) Shift in electron kinetic energy for core-level photoemission and low-energy cut-off of the secondary emission as a function of sample treatment for GaSe (top) and AlSe (bottom) terminated Si(111). A positive shift in kinetic energy reflects a lower CL binding energy.
(Color online) Normal emission valence band spectra excited by He I photons for Si(111):GaSe (top) and Si(111):AlSe (bottom), before and after exposure to atmosphere. Spectra are aligned relative to Si valence band maximum (VBM) via the bulk Si emission 1.4 eV below the VBM (dashed lines).
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