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Chemical passivity of III-VI bilayer terminated Si(111)
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10.1063/1.2112200
/content/aip/journal/apl/87/17/10.1063/1.2112200
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112200
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Effect of atmospheric exposure on core-level emission. excited emission for GaSe (left) and AlSe (right) terminated Si(111) before (solid line) and after (dashed line) exposure to atmosphere and a subsequent anneal (dotted line). (a) (left) and (right); (b) ; (c) ; (d) . Short-dashed lines in (a) are least-square fitted components for post-anneal . Dark dashed line in (d) is emission after atmospheric exposure of a GaSe-terminated surface grown with excess Se.

Image of FIG. 2.
FIG. 2.

(Color online) Shift in electron kinetic energy for core-level photoemission and low-energy cut-off of the secondary emission as a function of sample treatment for GaSe (top) and AlSe (bottom) terminated Si(111). A positive shift in kinetic energy reflects a lower CL binding energy.

Image of FIG. 3.
FIG. 3.

(Color online) Normal emission valence band spectra excited by He I photons for Si(111):GaSe (top) and Si(111):AlSe (bottom), before and after exposure to atmosphere. Spectra are aligned relative to Si valence band maximum (VBM) via the bulk Si emission 1.4 eV below the VBM (dashed lines).

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/content/aip/journal/apl/87/17/10.1063/1.2112200
2005-10-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical passivity of III-VI bilayer terminated Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2112200
10.1063/1.2112200
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