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(a) AES (b) HRTEM image for gatestack showing formation of stable NiSi phase. Region of is also shown.
curves on both - and -type substrates for the gatestack indicate similar accumulation capacitances.
vs EOT plots for gatestack with (a) substrate and (b) substrate.
(a) Tuning of work function with decreasing Ni content for the gatestack. (b) XRD for various Ni and Si compositions confirming the presence of different phases.
vs EOT plots for varying thickness of NiSi gates for the gatestack.
RBS data confirming composition of Ni and Si in the co-sputtered samples.
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