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Work function tuning of nickel silicide by co-sputtering nickel and silicon
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10.1063/1.2115072
/content/aip/journal/apl/87/17/10.1063/1.2115072
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2115072

Figures

Image of FIG. 1.
FIG. 1.

(a) AES (b) HRTEM image for gatestack showing formation of stable NiSi phase. Region of is also shown.

Image of FIG. 2.
FIG. 2.

curves on both - and -type substrates for the gatestack indicate similar accumulation capacitances.

Image of FIG. 3.
FIG. 3.

vs EOT plots for gatestack with (a) substrate and (b) substrate.

Image of FIG. 4.
FIG. 4.

(a) Tuning of work function with decreasing Ni content for the gatestack. (b) XRD for various Ni and Si compositions confirming the presence of different phases.

Image of FIG. 5.
FIG. 5.

vs EOT plots for varying thickness of NiSi gates for the gatestack.

Tables

Generic image for table
Table I.

RBS data confirming composition of Ni and Si in the co-sputtered samples.

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/content/aip/journal/apl/87/17/10.1063/1.2115072
2005-10-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Work function tuning of nickel silicide by co-sputtering nickel and silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2115072
10.1063/1.2115072
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