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Production of native donors in ZnO by annealing at high temperature in Zn vapor
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10.1063/1.2117630
/content/aip/journal/apl/87/17/10.1063/1.2117630
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2117630
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Figures

Image of FIG. 1.
FIG. 1.

Optical absorption from ZnO crystals. These data were taken at room temperature with unpolarized light propagating along the axis. (a) After an anneal at 1100 °C for 30 min in zinc vapor. (b) Before the anneal.

Image of FIG. 2.
FIG. 2.

EPR spectrum of shallow donors and/or conduction band electrons in ZnO crystals. These data were taken at 15 K. (a) After an anneal at 1100 °C for 30 min in zinc vapor. (b) Before the anneal. This latter spectrum has been enhanced by a factor of 60.

Image of FIG. 3.
FIG. 3.

Infrared absorption from free carriers in ZnO. These data were taken at room temperature. (a) After an anneal at 1100 °C for 30 min in zinc vapor. (b) Before the anneal.

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/content/aip/journal/apl/87/17/10.1063/1.2117630
2005-10-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Production of native donors in ZnO by annealing at high temperature in Zn vapor
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2117630
10.1063/1.2117630
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