No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Epitaxial growth of multiferroic on GaN
6.The scan was performed on a diffractometer without sample tilt perpendicular to the beam ( angle), resulting in unequal intensities for symmetry related peaks.
7.In our model, the GaN is Ga terminated, and the subsequent layers are an apical oxygen layer of followed by either a MnO layer or a Y layer. Bonding is assumed to occur between the Ga surface atoms and the apical oxygen layer of . The formation of the interface then results from a competition between elastic strain and Ga–O bond formation in the first deposited layer.
8.C. J. Fennie and K. M. Rabe, Phys. Rev. B 72, 100103–R (2005).
9.The strain was defined with respect to the experimentally observed in-plane spacing of .
10.Available experimental single crystal elastic constant data for rare earth manganites are mostly for the colossal magnetoresistive materials. One published experimental measurement for bulk polycrystalline hexagonal manganites (M. C. Sekhar, K. Padmavathi, J. G. Park, and P. V. Reddy, Mod. Phys. Lett. B 17, 1119 (2003)) was found, with measured elastic moduli about eight times smaller than what we calculate here and what others have measured for single crystal colossal magnetoresistive materials.
13.L. Nai-Xia, X. Yi-Jun, C. Wen-Kai, and Z. Yong-Fan, J. Mol. Struct.: THEOCHEM 668, 51 (2004).
Article metrics loading...
Full text loading...
Most read this month