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Epitaxial growth of multiferroic on GaN
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10.1063/1.2120903
/content/aip/journal/apl/87/17/10.1063/1.2120903
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2120903
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction scan of a film showing -axis oriented growth. The rocking curve around the 0004 peak has a full width at half maximum of 0.25° ; (b) Off-axis scans of and GaN reflections. The scans reveal a 30° in-plane rotational offset between the two unit cells.

Image of FIG. 2.
FIG. 2.

Ferroelectric hysteresis loop of with a coercive field of and a remnant polarization of .

Image of FIG. 3.
FIG. 3.

(Color online) Schematic of the in-plane orientational relationship between the GaN substrate and the film for aligned unit cells with 4.1% tensile strain (bottom) and unit cells with a 30° offset with 9.9% compressive strain (top). The filled black circles are Ga surface atoms; the unfilled circles are N subsurface atoms of the substrate; and the filled blue circles are the atoms of the apical oxygen layer of . The black lines represent GaN unit cells, and the gray lines represent unit cells.

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/content/aip/journal/apl/87/17/10.1063/1.2120903
2005-10-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of multiferroic YMnO3 on GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/17/10.1063/1.2120903
10.1063/1.2120903
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