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Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer
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10.1063/1.2117623
/content/aip/journal/apl/87/19/10.1063/1.2117623
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2117623
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

IE and electron affinities, determined by UPS and IPES, of films of the hole transport and green emitter materials used in this study.

Image of FIG. 2.
FIG. 2.

(Color) (a) Radiance vs voltage plot for devices made with CBP, MPMP, and CBP/MPMP (1 nm)/CBP as the hole transport material; (b) efficiency vs voltage plot; and (c) dependence of radiance and efficiency on the thickness of the MPMP interlayer.

Image of FIG. 3.
FIG. 3.

(Color) Combined UPS-IPES spectra of 8 nm films of MPMP, CBP, and . The polynomial background (blue), Gaussian peaks (green), and removal of instrumental broadening (0.5 eV) (red) used in analyzing IPES spectra with standard nonlinear least-square fittings are also shown in colors. The position of is given in each panel with respect to the Fermi level. Its value corresponds to the measured work function of the thin film on the Au substrate.

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/content/aip/journal/apl/87/19/10.1063/1.2117623
2005-10-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2117623
10.1063/1.2117623
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