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Local-strain effects in islands on oxide
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View: Figures


Image of FIG. 1.
FIG. 1.

With the stack on the , the can provide a good interface quality, and hence, the nonlattice-mismatch state is set in the finite element analysis.

Image of FIG. 2.
FIG. 2.

(a) Fringe pattern of the multilayer structure at a stress free condition of 25 °C, (b) fringe pattern of the multilayer structure at 40 °C thermal loading condition, and (c) fringe pattern of the multilayer structure at 60 °C thermal loading condition.

Image of FIG. 3.
FIG. 3.

The lattice-mismatch induced-strain distribution of the stack. Points reveal the different distances from the center of the top Si layer surface (following 0, , and , respectively). Owing to the geometric symmetry, the -directional strain pattern is symmetric. Most of the areas of the top and bottom Si layers show a tensile strain, while the intermediate SiGe layer indicates a compressive strain. Note that the edge of the top and bottom Si layers turns into a compressive strain area due to the bending effect.

Image of FIG. 4.
FIG. 4.

(a) The relationship between the characteristic length of the mesa and the different thicknesses of the stack at different locations of the surface of the top Si layer. The positive -directional strain indicates a tensile strain, and the negative -directional strain indicates a compressive strain. (b) The -directional strain at the center of the top surface of the mesas vs different stack thickness.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local-strain effects in Si∕SiGe∕Si islands on oxide