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(a) SEM image of SA-MOVPE grown memory structure, (b) equivalent circuit, (c) growth sequence, and (d) schematic conduction-band profile.
(a) Hysteresis at . Insert at right bottom is reverse loop obtained with scanning range up to . (b) Hysteresis effect at three different scanning ranges.
(a) Hysteresis for different scanning ranges in steps of , showing a clear shift in at . Insert shows vs . (b) Temperature dependence of and .
Real time measurements at (a) 20 and (b) .
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