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Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy
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10.1063/1.2120905
/content/aip/journal/apl/87/19/10.1063/1.2120905
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2120905
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of SA-MOVPE grown memory structure, (b) equivalent circuit, (c) growth sequence, and (d) schematic conduction-band profile.

Image of FIG. 2.
FIG. 2.

(a) Hysteresis at . Insert at right bottom is reverse loop obtained with scanning range up to . (b) Hysteresis effect at three different scanning ranges.

Image of FIG. 3.
FIG. 3.

(a) Hysteresis for different scanning ranges in steps of , showing a clear shift in at . Insert shows vs . (b) Temperature dependence of and .

Image of FIG. 4.
FIG. 4.

Real time measurements at (a) 20 and (b) .

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/content/aip/journal/apl/87/19/10.1063/1.2120905
2005-11-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2120905
10.1063/1.2120905
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