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Dislocation loops in silicon-germanium alloys: The source of interstitials
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10.1063/1.2123389
/content/aip/journal/apl/87/19/10.1063/1.2123389
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2123389
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of B marker in SiGe annealed at 750 °C (a) without and (b) with a 60 keV, .

Image of FIG. 2.
FIG. 2.

PTEM images of SiGe implanted with 60 keV, Si and annealed at 750 °C for (a) 5, (b) 10, (c) 30, and (d) 120 min.

Image of FIG. 3.
FIG. 3.

Trapped interstitial and time-averaged diffusivity enhancement as a function of anneal time for SiGe implanted with 60 keV, Si and annealed at 750 °C.

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/content/aip/journal/apl/87/19/10.1063/1.2123389
2005-11-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation loops in silicon-germanium alloys: The source of interstitials
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2123389
10.1063/1.2123389
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