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Compressive strain dependence of hole mobility in strained Ge channels
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10.1063/1.2126114
/content/aip/journal/apl/87/19/10.1063/1.2126114
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126114
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of the samples grown on the graded buffer layers with Ge compositions of 53, 62, and 70%.

Image of FIG. 2.
FIG. 2.

XTEM image of the sample with 7.5-nm-thick channel layer grown on the graded buffer layer with Ge composition of 53%.

Image of FIG. 3.
FIG. 3.

The strain dependence of the hole Hall mobility for all samples fabricated here at (a) 8 K and (b) RT.

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/content/aip/journal/apl/87/19/10.1063/1.2126114
2005-10-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compressive strain dependence of hole mobility in strained Ge channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126114
10.1063/1.2126114
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