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Dielectric and ferroelectric properties of thin films prepared by metalorganic solution deposition
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10.1063/1.2126129
/content/aip/journal/apl/87/19/10.1063/1.2126129
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126129
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of 0.8NBT–0.2KBT thin films on (a) and (b) Si substrates, annealed at 700 °C for 10 min, respectively.

Image of FIG. 2.
FIG. 2.

(a) - hysteresis loops for 0.8NBT–0.2KBT films on substrate at three different voltages. (b) the fatigue test results determined using a fatigue voltage of and a measuring voltage of 2.5 V at a frequency of 250 kHz.

Image of FIG. 3.
FIG. 3.

(a) Applied voltage dependencies on the - curves of MFS capacitor. (b) - characteristics of MFS at various dc voltage ramp rate at applied bias voltages.

Image of FIG. 4.
FIG. 4.

Temperature dependence of capacitance at various frequencies for 0.8NBT–0.2KBT thin films deposited on Si substrate.

Image of FIG. 5.
FIG. 5.

Dielectric constant and dissipation factor of MFM capacitor as a function of frequency.

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/content/aip/journal/apl/87/19/10.1063/1.2126129
2005-10-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric and ferroelectric properties of (Na0.8K0.2)0.5Bi0.5TiO3 thin films prepared by metalorganic solution deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126129
10.1063/1.2126129
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