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Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
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10.1063/1.2126136
/content/aip/journal/apl/87/19/10.1063/1.2126136
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126136

Figures

Image of FIG. 1.
FIG. 1.

IR absorption measured by enhanced sensitivity ATR-FTIR. Excellent signal-to-noise was obtained by using Germanium ATR.

Image of FIG. 2.
FIG. 2.

XRD spectra for (a) 40 nm MOCVD , (b) 40 nm ALD , and (c) 40 nm MOCVD HfSiO. Spectra for 10 nm and 20 nm thick films are similar to the respective 40 nm film spectra. 5 nm ALD films are too thin to observe any reflections.

Image of FIG. 3.
FIG. 3.

The imaginary part of the dielectric function, determined from VUV-SE data, for 5, 10, 20, and 40 nm thick ALD films. All MOCVD spectra (not shown) are similar to that of the polycrystalline 40 nm ALD sample. All MOCVD HfSiO spectra (not shown) are similar to that of the amorphous 5 nm ALD sample.

Tables

Generic image for table
Table I.

Phase, defect state energy, optical band gap, and IR phonon frequency, as determined by VUV-SE and ATR-FTIR.

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/content/aip/journal/apl/87/19/10.1063/1.2126136
2005-11-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126136
10.1063/1.2126136
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