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IR absorption measured by enhanced sensitivity ATR-FTIR. Excellent signal-to-noise was obtained by using Germanium ATR.
XRD spectra for (a) 40 nm MOCVD , (b) 40 nm ALD , and (c) 40 nm MOCVD HfSiO. Spectra for 10 nm and 20 nm thick films are similar to the respective 40 nm film spectra. 5 nm ALD films are too thin to observe any reflections.
The imaginary part of the dielectric function, determined from VUV-SE data, for 5, 10, 20, and 40 nm thick ALD films. All MOCVD spectra (not shown) are similar to that of the polycrystalline 40 nm ALD sample. All MOCVD HfSiO spectra (not shown) are similar to that of the amorphous 5 nm ALD sample.
Phase, defect state energy, optical band gap, and IR phonon frequency, as determined by VUV-SE and ATR-FTIR.
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