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Damage formation and annealing at low temperatures in ion implanted ZnO
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10.1063/1.2126137
/content/aip/journal/apl/87/19/10.1063/1.2126137
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126137

Figures

Image of FIG. 1.
FIG. 1.

Aligned and random RBS/C spectra before and after implantation with N ions. The window used for the integration of counts to determine is indicated.

Image of FIG. 2.
FIG. 2.

as a function of the ion fluence for N, Ar, and Er implantation. The plotted curves are fits based on the defect interaction and amorphisation model of Hecking et al. (See Ref. 16) [Eq. (1)].

Image of FIG. 3.
FIG. 3.

as a function of the annealing temperature after implantation of at 15 K.

Tables

Generic image for table
Table I.

Resulting parameters of the fits to the experimental data based on the defect interaction and amorphisation model of Hecking et al. (see Ref. 16) [Eq. (1)].

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/content/aip/journal/apl/87/19/10.1063/1.2126137
2005-10-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage formation and annealing at low temperatures in ion implanted ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126137
10.1063/1.2126137
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