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Nanoscale lateral epitaxial overgrowth of GaN on Si (111)
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10.1063/1.2126138
/content/aip/journal/apl/87/19/10.1063/1.2126138
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126138
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of NLEO GaN: (a) a template GaN on Si (111) using AlN as a buffer layer; (b) nanopattern has been transferred to using AAO as a mask. The pore diameter is 65 nm with interpore spacing 110 nm; (c) GaN nanoislands selectively grow into the pores; (d) coalescence of truncated hexagonal pyramids of NLEO GaN; and (e) a continuous NLEO GaN layer.

Image of FIG. 2.
FIG. 2.

SEM image of the mask.

Image of FIG. 3.
FIG. 3.

Cross-sectional SEM image showing the NLEO GaN truncated hexagonal pyramids. The inset is the magnified SEM image of the interface region. The dark contrast is the mask.

Image of FIG. 4.
FIG. 4.

Cross-section bright-field TEM image of NLEO GaN. The white contrast at the interface indicates the mask. (a) Cross-section TEM image of truncated hexagonal pyramids revealing the dramatic reduction of threading dislocations. The inset is the diffraction pattern taken within the NLEO GaN pyramids. (b) Magnified TEM image at the interface between NLEO and mask region.

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/content/aip/journal/apl/87/19/10.1063/1.2126138
2005-11-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale lateral epitaxial overgrowth of GaN on Si (111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126138
10.1063/1.2126138
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