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Ring and axis mode switching in multielectrode strained InGaAsP multiple-quantum-well quasistadium laser diodes
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10.1063/1.2126143
/content/aip/journal/apl/87/19/10.1063/1.2126143
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126143
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscope image of multielectrode strained InGaAsP MQW quasistadium laser diodes under a concentric resonator condition. (b) Schematic diagram of a laser resonator and -electrode contact area pattern.

Image of FIG. 2.
FIG. 2.

Dependence of the round-trip diffraction loss on the width of the curved end mirror calculated for (a) axis mode and (b) ring trajectory mode.

Image of FIG. 3.
FIG. 3.

Peak end mirror output power vs injection current characteristics of a multielectrode strained InGaAsP MQW quasistadium laser diode for current injection at (a) the axis electrode and (b) the ring electrode. The laser diode was operated using a pulsed current with pulse width and 1 kHz repetition. The measurement were made at 25 °C.

Image of FIG. 4.
FIG. 4.

Lasing spectra of the multielectrode strained InGaAsP MQW quasistadium laser diode for current injection at (a) the axis electrode and (b) the ring electrode. The laser diode was operated using a pulsed current with pulse width and 1 kHz repetition.

Image of FIG. 5.
FIG. 5.

Far-field patterns of a multielectrode strained InGaAsP MQW quasistadium laser diode for current injection at (a) the axis electrode and (b) the ring electrode. The origin of the angle axis corresponds to the axis of the cavity. The laser diode was operated using a pulsed current with pulse width and 1 kHz repetition.

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/content/aip/journal/apl/87/19/10.1063/1.2126143
2005-10-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ring and axis mode switching in multielectrode strained InGaAsP multiple-quantum-well quasistadium laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126143
10.1063/1.2126143
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