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The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
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10.1063/1.2126144
/content/aip/journal/apl/87/19/10.1063/1.2126144
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126144
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Boron profiles measured by SIMS before and after RTA for 30 s at different temperatures for the as-implanted samples (a) and the samples pretreated with ELA using ten pulses of (b).

Image of FIG. 2.
FIG. 2.

Carrier concentration profiles measured by SRP before after RTA for 30 s at different temperatures for the as-implanted samples (a) and the samples pretreated with ELA using ten pulses of (b).

Image of FIG. 3.
FIG. 3.

Boron profiles measured by SIMS after implantation and RTA at 1100 °C with or without ELA pretreatment.

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/content/aip/journal/apl/87/19/10.1063/1.2126144
2005-11-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2126144
10.1063/1.2126144
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