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type doping of zinc oxide by arsenic ion implantation
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10.1063/1.2128064
/content/aip/journal/apl/87/19/10.1063/1.2128064
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128064

Figures

Image of FIG. 1.
FIG. 1.

Sheet carrier concentration of ZnO thin films measured after implantation (except for the sample labeled as unimplanted), and after implantation and annealing in oxygen atmosphere ( for ). The implantations were performed using the CIRA approach except for the one labeled as conventional. Error bars are represented by the marker size.

Tables

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Table I.

Values of sheet resistance, mobility, carrier concentration, and carrier type, determined by Hall effect and conductivity measurements, performed at room temperature, for as-prepared (CIRA implant), and as-prepared and annealed samples. Values for a conventional room-temperature As implantation, as well as the unimplanted samples, are also shown for comparison. The symbol “-” indicates that the experimental determination was not possible, usually due to the high resistivity or low mobility of the particular sample.

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/content/aip/journal/apl/87/19/10.1063/1.2128064
2005-10-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p type doping of zinc oxide by arsenic ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128064
10.1063/1.2128064
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