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Sheet carrier concentration of ZnO thin films measured after implantation (except for the sample labeled as unimplanted), and after implantation and annealing in oxygen atmosphere ( for ). The implantations were performed using the CIRA approach except for the one labeled as conventional. Error bars are represented by the marker size.
Values of sheet resistance, mobility, carrier concentration, and carrier type, determined by Hall effect and conductivity measurements, performed at room temperature, for as-prepared (CIRA implant), and as-prepared and annealed samples. Values for a conventional room-temperature As implantation, as well as the unimplanted samples, are also shown for comparison. The symbol “-” indicates that the experimental determination was not possible, usually due to the high resistivity or low mobility of the particular sample.
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