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Dynamic redistribution of the electric field of the channel in high electron mobility transistor with nanometer-scale gate length
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10.1063/1.2128067
/content/aip/journal/apl/87/19/10.1063/1.2128067
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128067
/content/aip/journal/apl/87/19/10.1063/1.2128067
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/content/aip/journal/apl/87/19/10.1063/1.2128067
2005-11-03
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128067
10.1063/1.2128067
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