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Normalized current noise spectra measured at room temperature and different gate voltages. Gate length is , spacing between source and drain is . .
Transfer characteristics of the transistor measured: (a) at room temperature and different and (b) at different temperatures and .
Total resistance of the channel as a function of normalized effective gate voltage. Symbols are experimental data obtained at (open circles) and (solid circles). . The solid line shows dependence, and the dashed line determines invariable background (resistance of passive region).
Dependences of current noise density on normalized effective gate voltage. Symbols are experimental data obtained at (open circles) and (solid squares). . The solid lines show for convenience different power dependences on gate voltage.
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