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Dynamic redistribution of the electric field of the channel in high electron mobility transistor with nanometer-scale gate length
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10.1063/1.2128067
/content/aip/journal/apl/87/19/10.1063/1.2128067
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128067
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized current noise spectra measured at room temperature and different gate voltages. Gate length is , spacing between source and drain is . .

Image of FIG. 2.
FIG. 2.

Transfer characteristics of the transistor measured: (a) at room temperature and different and (b) at different temperatures and .

Image of FIG. 3.
FIG. 3.

Total resistance of the channel as a function of normalized effective gate voltage. Symbols are experimental data obtained at (open circles) and (solid circles). . The solid line shows dependence, and the dashed line determines invariable background (resistance of passive region).

Image of FIG. 4.
FIG. 4.

Dependences of current noise density on normalized effective gate voltage. Symbols are experimental data obtained at (open circles) and (solid squares). . The solid lines show for convenience different power dependences on gate voltage.

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/content/aip/journal/apl/87/19/10.1063/1.2128067
2005-11-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128067
10.1063/1.2128067
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