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Synthesis and postgrowth doping of silicon nanowires
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10.1063/1.2128070
/content/aip/journal/apl/87/19/10.1063/1.2128070
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128070
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) EFTEM images were used to construct a color-coded map of the chemical environment of Si, where red represents crystalline Si, and green represents amorphous . Accordingly, the coiled object is identified as pure whereas the object in the upper left corner is a Si nanowire with an sheath. (b) A high-resolution TEM image of a SiNW grown along ⟨111⟩. The arrow indicates the location of a stacking fault in the SiNW. Inset is the associated CBED pattern of the SiNW, taken along . The (111) and disks are labeled.

Image of FIG. 2.
FIG. 2.

(Color online) data of an as-grown SiNW FET recorded for . The threshold voltages of the device depend on the gate sweep directions. Squares (black) represent the gate bias sweep from while triangles (red) represent the gate bias sweep from . (Inset) A set of data recorded at different gate voltages.

Image of FIG. 3.
FIG. 3.

(Color online) characteristic of a Bi-doped SiNW FET recorded for . (Inset) A set of data recorded at different gate voltages.

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/content/aip/journal/apl/87/19/10.1063/1.2128070
2005-11-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis and postgrowth doping of silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128070
10.1063/1.2128070
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