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(Color online) (a) EFTEM images were used to construct a color-coded map of the chemical environment of Si, where red represents crystalline Si, and green represents amorphous . Accordingly, the coiled object is identified as pure whereas the object in the upper left corner is a Si nanowire with an sheath. (b) A high-resolution TEM image of a SiNW grown along ⟨111⟩. The arrow indicates the location of a stacking fault in the SiNW. Inset is the associated CBED pattern of the SiNW, taken along . The (111) and disks are labeled.
(Color online) data of an as-grown SiNW FET recorded for . The threshold voltages of the device depend on the gate sweep directions. Squares (black) represent the gate bias sweep from while triangles (red) represent the gate bias sweep from . (Inset) A set of data recorded at different gate voltages.
(Color online) characteristic of a Bi-doped SiNW FET recorded for . (Inset) A set of data recorded at different gate voltages.
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