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Influence of dislocations in strained SiGe layers on -junctions in a metal-oxide-semiconductor field-effect transistor technology
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10.1063/1.2128490
/content/aip/journal/apl/87/19/10.1063/1.2128490
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128490
/content/aip/journal/apl/87/19/10.1063/1.2128490
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/content/aip/journal/apl/87/19/10.1063/1.2128490
2005-11-04
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128490
10.1063/1.2128490
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