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Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
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10.1063/1.2128491
/content/aip/journal/apl/87/19/10.1063/1.2128491
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128491
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of ZnO samples: (a) as-grown ZnO, excited with above band gap He–Cd laser line (325 nm), (b) ZnO:Tm, excited with above band gap He–Cd laser line (325 nm), (c) the same ZnO:Tm sample excited with below band gap excitation (457.9 nm).

Image of FIG. 2.
FIG. 2.

Normalized 7 K PL spectra obtained with different below band gap excitation wavelengths: (a) 457.9 nm, (b) 476.5 nm, and (c) 514.5 nm.

Image of FIG. 3.
FIG. 3.

Log-log plot for the up-converted luminescence intensity as a function of excitation power of the 457.9 nm laser of an laser. Results are shown for the different emission lines observed in ZnO:Tm samples: (a) 3.36 eV, (b) 3.35 eV, (c) 3.323 eV, (d) 3.333 eV, (e) 3.29 eV, (f) 3.27 eV, and (g) 3.22 eV.

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/content/aip/journal/apl/87/19/10.1063/1.2128491
2005-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2128491
10.1063/1.2128491
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