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Photovoltaic operation up to 270 K of a strain-compensated quantum well infrared photodetector
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10.1063/1.2130379
/content/aip/journal/apl/87/19/10.1063/1.2130379
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2130379
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Modeled (solid line) and (dashed line) conduction band edge profile of the sample showing the relative positions of the calculated Fermi level (dashed dot line) and the subband energy levels.

Image of FIG. 2.
FIG. 2.

Photoluminescence spectrum at 300 K.

Image of FIG. 3.
FIG. 3.

Intersubband absorption measured at 300 K using 45° waveguide geometry (thick line) and Lorentzian curve fit (thin line).

Image of FIG. 4.
FIG. 4.

(a) Photoresponse at zero bias as a function of temperature and (b) the photoresponse at 270 K (thick line) and signal without illumination (thin line) on an expanded scale.

Image of FIG. 5.
FIG. 5.

Photoresponse at for various values of external negative bias.

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/content/aip/journal/apl/87/19/10.1063/1.2130379
2005-11-04
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2130379
10.1063/1.2130379
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