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Initial nitride formation at interface by oxynitridation
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10.1063/1.2130714
/content/aip/journal/apl/87/19/10.1063/1.2130714
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2130714
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Figures

Image of FIG. 1.
FIG. 1.

core-level spectra for of NO exposures followed by thermal annealing at of (a) clean and (b) covered surfaces. S1, S2, and S3 are the surface shifted components, B is the bulk component, A1, A2, and A3 are the oxynitride products, and C1 and C2 correspond to silicon substoichiometric and stoichiometric nitride products, respectively. The photon energy is (surface sensitive mode).

Image of FIG. 2.
FIG. 2.

core-level spectra for a NO exposure at and after a thermal annealing of (a) clean and (b) covered surfaces. The photon energy is (surface sensitive mode).

Image of FIG. 3.
FIG. 3.

core-level spectra for clean and NO exposure at of (a) clean and (b) covered surfaces. The photon energy is (surface sensitive mode).

Image of FIG. 4.
FIG. 4.

core-level spectra for of NO exposures followed by thermal annealing at of (a) clean and (b) covered surfaces. The photon energy is (surface sensitive mode).

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/content/aip/journal/apl/87/19/10.1063/1.2130714
2005-11-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Initial nitride formation at Si∕3C–SiC(100)3×2 interface by oxynitridation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/19/10.1063/1.2130714
10.1063/1.2130714
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