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Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
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10.1063/1.1952578
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    Affiliations:
    1 Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 and GES CNRS-Université Montpellier2 UMR 5650 34900 Montpellier, France
    2 Center for THz Research and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180
    3 Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
    4 Center for THz Research and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180
    5 Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
    6 Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 and GES CNRS-Université Montpellier2 UMR 5650 34900 Montpellier, France
    7 Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 and Center for THz Research and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180
    a) Electronic mail: teppe@ges.univ-montp2.fr; teppef@rpi.edu
    Appl. Phys. Lett. 87, 022102 (2005); http://dx.doi.org/10.1063/1.1952578
/content/aip/journal/apl/87/2/10.1063/1.1952578
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1952578
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

THz generation by optical rectification in ZnTe crystal. The upper figure (a) shows temporal profile of a THz pulse measured by EO sampling and the lower figure (b) shows its frequency profile obtained by fast Fourier transform method. Superimposed curve (dotted line) is a fitting of the spectrum with Lorentzian function and shows maximum amplitude at and a width of .

Image of FIG. 2.
FIG. 2.

Threshold behavior of the drain response as a function of applied current for different values of gate voltage (from ). Inset shows characteristics of the device at different values of the gate voltage (, down to ).

Image of FIG. 3.
FIG. 3.

Detector photoresponse under broadband THz radiation as a function of gate voltage for different values of dc drain current .

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/content/aip/journal/apl/87/2/10.1063/1.1952578
2005-07-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1952578
10.1063/1.1952578
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