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GaAs on Si(111)—crystal shape and strain relaxation in nanoscale patterned growth
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10.1063/1.1984100
/content/aip/journal/apl/87/2/10.1063/1.1984100
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1984100
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A 45°-tilted and (b) a top view SEM image of the as-grown sample. The dashed circle in (b) corresponds to the original circular opening. Once -type sidewalls are fully developed, lateral growth slows and does not proceed significantly.

Image of FIG. 2.
FIG. 2.

(a) A XTEM image of a single GaAs nanopillar. The arrows indicate hexagonal phase regions. (b) A magnification of the region inside white box A in (a). (c) A magnification of the region of the white box indicated in (b). The black arrow indicates a twin boundary.

Image of FIG. 3.
FIG. 3.

(a) A high-resolution XTEM image of the region of the white box B in Fig. 2(a). (b) A SAED pattern taken near the white box B in Fig. 2(a). In (b), and mean cubic phase having the principal crystal axes identical to the Si substrate and hexagonal phase of which the (0006) spot coincides with the spot of cubic phase, respectively. The spots at the corner of white dashed rectangle correspond to (111) type of cubic phase.

Image of FIG. 4.
FIG. 4.

Room-temperature Raman spectrum (488 nm Ar-ion laser excitation source) of the as-grown sample. The inset shows Raman spectra from the as-grown sample and from a bulk GaAs(001) substrate.

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/content/aip/journal/apl/87/2/10.1063/1.1984100
2005-07-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs on Si(111)—crystal shape and strain relaxation in nanoscale patterned growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1984100
10.1063/1.1984100
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