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Core level spectra of (a) Gd and (b) Si for films as a function of concentration , taken with photon energy of 450 eV.
(a) Valence band and (b) O XAS spectra for films. The of was estimated from the extrapolation to the base line. Energy difference between valence band and in XAS corresponds to in valence band spectra.
O energy loss spectra of films. The energy band gap was determined from the onset point of loss spectrum.
Dependence of band gap and band offsets of films on the mole fraction of . The energy band parameters were obtained from photoemission and absorption. The inset shows a schematic energy band alignment of structure. No Fermi level pinning is assumed on -GaAs.
(a) High frequency and (b) curves measured from MOS diodes. The inset of Fig. 5(b) indicates the linear relationship of vs in FN tunneling.
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