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Controlled band offset in (001) structure
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10.1063/1.1992652
/content/aip/journal/apl/87/2/10.1063/1.1992652
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1992652
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Core level spectra of (a) Gd and (b) Si for films as a function of concentration , taken with photon energy of 450 eV.

Image of FIG. 2.
FIG. 2.

(a) Valence band and (b) O XAS spectra for films. The of was estimated from the extrapolation to the base line. Energy difference between valence band and in XAS corresponds to in valence band spectra.

Image of FIG. 3.
FIG. 3.

O energy loss spectra of films. The energy band gap was determined from the onset point of loss spectrum.

Image of FIG. 4.
FIG. 4.

Dependence of band gap and band offsets of films on the mole fraction of . The energy band parameters were obtained from photoemission and absorption. The inset shows a schematic energy band alignment of structure. No Fermi level pinning is assumed on -GaAs.

Image of FIG. 5.
FIG. 5.

(a) High frequency and (b) curves measured from MOS diodes. The inset of Fig. 5(b) indicates the linear relationship of vs in FN tunneling.

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/content/aip/journal/apl/87/2/10.1063/1.1992652
2005-07-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled band offset in (Gd2O3)1−x(SiO2)x(0⩽x⩽1)∕n–GaAs (001) structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1992652
10.1063/1.1992652
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