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Dark characteristics of the WC Schottky photodiode before and after annealing at for .
Dependence of annealing temperatures and times on the ideality factor and Schottky barrier height of the WC Schottky photodiode.
(a) characteristics of the diamond/WC photodiode annealed at for under light illumination, and (b) Dependence of the saturated dark current and photocurrent under light illumination with an intensity of at a reverse bias of on the annealing temperatures and times.
Spectral responsivity of the WC Schottky photodiode measured at reverse bias after annealing at for .
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