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Eu locations in Eu-doped quantum dots
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10.1063/1.1992667
/content/aip/journal/apl/87/2/10.1063/1.1992667
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1992667
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of InGaN:Eu QDs (solid line), GaN:Eu QDs (dashed dotted line), and GaN:Eu layer (dotted line) measured at and for excitations at 360, 300, and , respectively.

Image of FIG. 2.
FIG. 2.

PLE spectra for Eu emissions at 620.0, 622.3, and in InGaN:Eu QDs, measured at (a) and (b) 300 and . The horizontally dotted lines are PLE base lines. The vertically dotted lines show the band-gap energy of GaN given in Ref. 15. The insets show the PLE spectra in the spectral range of the intra- absorption of for emissions at 622, 622, and , measured at (a) and (b) .

Image of FIG. 3.
FIG. 3.

PL spectra from InGaN:Eu QDs measured at (a) and (b) with different excitation wavelengths (indicated at the curves). The spectra are normalized by the excitation power density and the integration time for detection. The spectrum under excitation is multiplied by a factor of 10 for clarity. The arrows indicate the lines assigned to Eu ions inside InGaN QDs.

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/content/aip/journal/apl/87/2/10.1063/1.1992667
2005-07-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Eu locations in Eu-doped InGaN∕GaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1992667
10.1063/1.1992667
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