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Effects of growth temperature on the structural and optical properties of GaInNAsSb quantum wells grown on GaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

Peak PL intensity, as a function of postgrowth annealing temperature. Inset shows the peak emission energy (as-grown) at room temperature.

Image of FIG. 2.
FIG. 2.

Integrated PL intensity with temperature. Solid lines are fits to data using the dual activation energy model (see Ref. 9). Inset shows the high temperature data for the 420–460 °C samples.

Image of FIG. 3.
FIG. 3.

HR–XRD scans for the different growth temperatures.

Image of FIG. 4.
FIG. 4.

Peak PL energy with temperature for the different growth temperatures, taken under excitation. Inset shows the peak shift for low temperatures. The peak uncertainty was .

Image of FIG. 5.
FIG. 5.

Peak PL shift with temperature under a reduced excitation density of . Localization effects were considerably more pronounced, including a clear S shape for the 470 °C sample.

Image of FIG. 6.
FIG. 6.

PL spectra at 25 K for the different growth temperature samples.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs