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Sketch of the epitaxial stacks studied.
Variation with the incidence angle (every 5°) of the 5 K reflectivity spectra of the sample with GaN thickness of , for TE and TM polarization.
Variation with the incidence angle (every 5°) of the room-temperature reflectivity spectra of the samples with GaN thicknesses of and (TE polarization).
Angle dependence of the energy of the reflectivity dips in the samples with GaN thicknesses and at room temperature.
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