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Hydrogen as origin of compressive intrinsic stress in hydrogenated amorphous silicon: The contribution of clustered forms
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10.1063/1.1999007
/content/aip/journal/apl/87/2/10.1063/1.1999007
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1999007
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized compressive stress in films vs the number of the implantation-induced dpa.

Image of FIG. 2.
FIG. 2.

IR absorption wagging-rocking modes in the as-deposited and ion-implanted films.

Image of FIG. 3.
FIG. 3.

IR absorption stretching modes in -SiH films: (a) As deposited, (b) silicon implanted, and (c) hydrogen implanted.

Image of FIG. 4.
FIG. 4.

Relative weight of IR stretching modes of the monohydride and clustered hydrogen bonding groups vs the number of the implantation-induced dpa.

Image of FIG. 5.
FIG. 5.

Normalized compressive stress vs the relative weight of IR stretching modes of the clustered hydrogen bonding groups, .

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/content/aip/journal/apl/87/2/10.1063/1.1999007
2005-07-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen as origin of compressive intrinsic stress in hydrogenated amorphous silicon: The contribution of clustered forms
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/2/10.1063/1.1999007
10.1063/1.1999007
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