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Ga elemental map of a series of GaN QDs embedded inside an AlN matrix. Slit , exposure . The Ga signal drops to zero inside the AlN spacers.
(Color online) (a) Off-axis HRTEM image of two vertically aligned GaN QDs embedded inside an AlN matrix. Only the (0002) planes are visible. (b) Corresponding to (a) experimental GPA strain map calculated using a Gaussian mask of size around the 0002 reflection. (c) Calculated two-dimensional map of the GPA strain in the QDs superlattice. (d) Calculated two-dimensional material strain map.
(Color online) (a) High-resolution image of two GaN QDs of the superlattice taken along the direction. (b) Corresponding GPA strain map calculated using the 01-10 reflection and by placing a Gaussian mask of size around it. (c) Calculated two-dimensional map of the GPA strain. (d) Calculated two-dimensional material strain map in the QDs SL.
Experimental and calculated results for the and strain components and ratio. The regions noted as AlN (WLs) and AlN (QDs) correspond to the AlN layer situated between two consecutive GaN WLs and two vertically aligned GaN QDs, respectively. GaN (WLs) is the wetting layer region. GaN (QDs) corresponds to the central region of the QD. The experimental values are averaged over the sample thickness.
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