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Photoluminescence at of an GaAsSb QW with InGaAs QDs either above, below, or in the middle of the well.
Comparison of the room temperature photoluminescence of GaAs and GaAsSb capped InGaAs QDs.
Excitation dependence of the photoluminescence at of InGaAs QDs capped with GaAsSb.
(002) DF reflection TEM micrograph near the  zone axis of GaAsSb capped InGaAs QDs.
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