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Negative luminescence of long-wavelength superlattice photodiodes
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10.1063/1.2130536
/content/aip/journal/apl/87/20/10.1063/1.2130536
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/20/10.1063/1.2130536
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

External QE of the NL for various temperatures and driving currents.

Image of FIG. 2.
FIG. 2.

Internal QE of NL observed upon reverse bias conditions (negative current density) and EL applying forward bias (positive current density). At , the device exhibits additional leakage currents, not observed at low temperatures.

Image of FIG. 3.
FIG. 3.

Internal QE for low injection conditions at forward bias plotted vs the inverse temperature. The ratio of the radiative and Auger recombination rates is plotted. A -type background of and dominant CCHC Auger recombination with has been chosen.

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/content/aip/journal/apl/87/20/10.1063/1.2130536
2005-11-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative luminescence of long-wavelength InAs∕GaSb superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/20/10.1063/1.2130536
10.1063/1.2130536
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