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Fine structure of superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
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10.1063/1.2136424
/content/aip/journal/apl/87/21/10.1063/1.2136424
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/21/10.1063/1.2136424
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Large-range HRXRD (0002) scan for the PALE SL, inset shows a detailed scan around . (b) Large-range HRXRD (0002) scan for the reference PALE AlGaN used in the SL.

Image of FIG. 2.
FIG. 2.

Cross-section TEM micrograph of the PALE SL . Upper inset shows the SAD pattern taken on ⟨10-10⟩ projection. Lower inset shows the lattice image focusing on the AlGaN SPSL.

Image of FIG. 3.
FIG. 3.

Cross-section TEM micrographs showing screw-type TDs in (a) with and (b) without SL insertion.

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/content/aip/journal/apl/87/21/10.1063/1.2136424
2005-11-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/21/10.1063/1.2136424
10.1063/1.2136424
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