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Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si
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View: Figures


Image of FIG. 1.
FIG. 1.

SIMS boron concentration profile (dotted line) of the sample 3 (B box: ). Implantation and thermal annealing induce B clustering (diamonds). Further annealing at 900 °C induces B clusters dissolution (open squares), whose simulation is also displayed (continuous line). The inset is a magnification, on a linear vertical scale, of the squared region.

Image of FIG. 2.
FIG. 2.

Clustered B dose normalized to the clustered dose after formation for sample 1 (B box: , squares), sample 2 (B box: , down triangles) and sample 3 (B box: , up triangles) as a function of the dissolution time at temperature of 900 (a) or 815 °C (b). Continuous lines are a fit to the data by the sum of two exponential decays, the slower of which is plotted with dotted lines.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of the dissolution rates of B clusters formed in sample 1, 2, and 3. Open (closed) symbols are relative to the faster (slower) process. All the processes were performed in atmosphere, except for two processes (circles) performed in atmosphere at 815 °C (slightly shifted towards lower temperatures, for clarity). Continuous lines are the best Arrhenius fits for the fast (upper line) and the slow (lower one) process obtained by a fit of all the data weighted by their errors (not shown).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si