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Schematic view of 20-wire device, where -wires are embedded in T-waveguide. Cross section of each T-wire is (stem well) (arm well). Percentages in parentheses represent Al content of .
Absorption spectra of 20 wires at . Solid curve and dotted curve represent absorption spectra for arm and stem polarizations, respectively. Room-temperature 1D-excitonic absorption is observed at .
Absorption spectra of 20 wires at . Solid curve and dotted curve show absorption spectrum for arm and stem polarizations, respectively.
(a) Absorption spectra of 20 wires for arm polarization at , , , , , and . Each curve is plotted with offset of . (b) Measured energies of the 1D-exciton peak (dots) and the calculated band-gap energy of GaAs plus (solid curve) for various temperatures.
Comparison of structures and measured data for 20-wire and single-wire devices. Listed absorption data are for arm polarization. Peak area is evaluated as product of peak value and FWHM. Ratio is evaluated for values and .
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