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Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
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10.1063/1.2135876
/content/aip/journal/apl/87/22/10.1063/1.2135876
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2135876
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Figures

Image of FIG. 1.
FIG. 1.

The velocity-field characteristic associated with bulk wurtzite InN. For our revised parameter selections, we considered two selections for the nonparabolicity coefficient, being set to and being set to , these selections spanning over the range of values one might expect for bulk wurtzite InN. We contrast these results with those obtained using traditional bulk wurtzite InN parameter selections. For the sake of comparison, a GaN velocity-field characteristic is also depicted. For all cases, we have assumed a crystal temperature of and a doping concentration of . For each velocity-field characteristic, the peak field, i.e., the applied electric-field strength at which point the maximum electron drift velocity occurs, is indicated with an arrow.

Image of FIG. 2.
FIG. 2.

The electron drift velocity as a function of the distance displaced since the application of the electric field, for various applied electric-field strength selections, for the case of bulk wurtzite InN. For all cases, we have assumed an initial zero-field electron distribution, a crystal temperature of , and a doping concentration of . For all cases, we employed our revised parameter selections and set the nonparabolicity coefficient, , to .

Image of FIG. 3.
FIG. 3.

A comparison of the velocity overshoot amongst the III-V nitride semiconductors considered in this analysis and GaAs. The applied electric-field strength chosen corresponds to twice the critical applied electric field strength at which the peak in the steady-state velocity-field characteristic occurs (recall Fig. 1), i.e., for the case of GaN, for the case of InN with traditional parameter selections, for the case of InN with revised parameter selections and set to , for the case of InN with revised parameter selections and set to , and for the case of GaAs.

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/content/aip/journal/apl/87/22/10.1063/1.2135876
2005-11-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2135876
10.1063/1.2135876
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