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Time evolution of the film thickness for layers deposited at various dilution ratios, , 85, and 129. No formation of the layer at the deposition time for and for is determined by AES measurement. The inset shows the film thickness dependence of Raman crystallinity , where is the peak intensity of an amorphous component and is that of a crystalline component . The deposition rates shown in the figure are deduced from linear fits.
Time evolution of the Auger electron intensity of Zn LMM (990 eV), O KLL (514 eV), and Si LVV (Si–Si: 96 eV and Si–O: 80 eV) during -layer deposition at (a) and (b) , where is a normalized peak-to-peak intensity of Auger spectra. The exponential fits for (solid lines) follow as , where is the film thickness of the layer and is the attenuation length of the O KLL Auger electron. The and are deduced from the deposition rates obtained in Fig. 1 ( and ). The dotted lines are provided as guides to the eyes.
Influence of the -layer and interface layer on solar cell characteristics . The layers in the solar cells were deposited at (solid symbols) and 129 (open symbols). The dashed and solid lines are provided as guides to the eyes.
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