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In situ Auger electron spectroscopy studies of the growth of -type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells
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10.1063/1.2135883
/content/aip/journal/apl/87/22/10.1063/1.2135883
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2135883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time evolution of the film thickness for layers deposited at various dilution ratios, , 85, and 129. No formation of the layer at the deposition time for and for is determined by AES measurement. The inset shows the film thickness dependence of Raman crystallinity , where is the peak intensity of an amorphous component and is that of a crystalline component . The deposition rates shown in the figure are deduced from linear fits.

Image of FIG. 2.
FIG. 2.

Time evolution of the Auger electron intensity of Zn LMM (990 eV), O KLL (514 eV), and Si LVV (Si–Si: 96 eV and Si–O: 80 eV) during -layer deposition at (a) and (b) , where is a normalized peak-to-peak intensity of Auger spectra. The exponential fits for (solid lines) follow as , where is the film thickness of the layer and is the attenuation length of the O KLL Auger electron. The and are deduced from the deposition rates obtained in Fig. 1 ( and ). The dotted lines are provided as guides to the eyes.

Image of FIG. 3.
FIG. 3.

Influence of the -layer and interface layer on solar cell characteristics . The layers in the solar cells were deposited at (solid symbols) and 129 (open symbols). The dashed and solid lines are provided as guides to the eyes.

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/content/aip/journal/apl/87/22/10.1063/1.2135883
2005-11-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2135883
10.1063/1.2135883
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