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Oxygen segregation to dislocations in GaN
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10.1063/1.2136224
/content/aip/journal/apl/87/22/10.1063/1.2136224
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2136224
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM image of a screw dislocation, , and a nanopipe, , imaged in bright field under two-beam conditions with (arrowed). The inset shows more clearly the faceting of the voids.

Image of FIG. 2.
FIG. 2.

TEM image of a series of dislocation loops with Burgers vectors of type, which are believed to be due to the collapse of a dipole consisting of parallel screw dislocations following the dashed lines. The insets (a) and (b) show nanopipes with occasional pinched sections that extend along the full length of the dashed lines.

Image of FIG. 3.
FIG. 3.

STEM analysis of an end-on nanopipe in a sample (a) , O–K, and N–K profiles from an EELS line scan; (b) HAADF (high angle annular dark field) image; and (c) bright field image of the nanopipe. Points 1–4 in (b) show corresponding points in (a).

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/content/aip/journal/apl/87/22/10.1063/1.2136224
2005-11-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen segregation to dislocations in GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2136224
10.1063/1.2136224
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